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| 30 -10V -6V -5V 25 Vds=-5V 20 20 -Id (A) -Id (A) -4.5V 15 125C 10 10 Vgs=-4V 5 25C 0 0 2 3 4 -Vds (Volts) Fig 1: On-Region Characteristics 1 5 0 2 2.5 3.5 4 4.5 -Vgs (Volts) Figure 2: Transfer Characteristics 3 5 18 1.6 17 Vgs=-10V Normalized On-Resistance 1.4 Rds(on) (m:) Vgs=-10V Id=-8A 16 1.2 Vgs=-20V Id=-8A 1 15 Vgs=-20V 14 0 5 10 15 20 25 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 Id=-8A 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 50 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1.0E-03 125C 30 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-04 20 25C 25C 1.0E-05 10 2 4 6 8 10 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vsd (Volts) Figure 6: Body-Diode Characteristics -Is (A) 40 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-02 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARIS Rds(on) (m:) 1.0E-01 125C 10 Vds=-15V Id=-8A 8 3000 2500 Ciss Capacitance (pF) -Vgs (Volts) 2000 1500 Coss 1000 500 0 Crss 6 4 2 0 0 5 20 25 30 35 40 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 45 0 15 20 25 -Vds (Volts) Figure 8: Capacitance Characteristics 5 10 30 100.0 Rds(on) limited 100Ps 1ms 10Ps 40 Tj(max)=150C Ta=25C 30 -Id (Amps) 10ms 0.1s 1.0 1s Tj(max)=150C Ta=25C 0.1 0.1 1 10 100 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10s DC Power (W) 10.0 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISI FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.1 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Pd Ton Single Pulse 0.01 0.00001 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000 ZTja Normalized Transient Thermal Resistance D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse T |
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